| PART |
Description |
Maker |
| EMA6DXV5T5 EMA6DXV5T1 EMA6DXV5T1/D |
Dual Common Emitter Bipolar Resistor Transistor
Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP
Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ON Semiconductor
http://
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| 1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
| 1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor
|
GHz Technology
|
| 1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor
|
GHz Technology
|
| 1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| AT31625 |
NPN Common Emitter Medium Power Output Transistor
|
Hewlett-Packard
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| TD62504FB TD62503FB E005669 |
From old datasheet system
7CH SINGLE DRIVER :COMMON EMITTER
7CH SINGLE DRIVER : COMMON EMITTER 7通道单一驱动程序：共发射
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
